Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy

doi:10.1007/s00339-014-8576-z

	Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy
	Morshed, Muhammad M.1; Zuo, Zheng 1; Huang, Jian 1; Zheng, Jian-Guo 2; Lin, Qiyin 2; Yan, Xiaoqing 3; Liu, Jianlin 1
	2014-11
发表期刊	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN	0947-8396
卷号	117 期号:3 页码:1467-1472
摘要	Temperature-dependent photoluminescence of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown on c-plane sapphire substrate by rf plasma-assisted molecular beam epitaxy is investigated. P-type behavior is confirmed by both Hall effect and Seebeck measurements. Structural defect-related bound excitonic emission peak is distinguished at around similar to 50 meV lower than peak energy of the near band edge neutral acceptor bound excitonic emission. Typical 'S shape' behavior of energy position versus temperature is observed due to polarization-induced internal field. Nitrogen-related acceptor ionization energy is calculated to be similar to 180-200 meV.
关键词	TEMPERATURE-DEPENDENCE ZINC-OXIDE STACKING-FAULTS ZNO LUMINESCENCE ALLOYS ENERGY CONDUCTIVITY SPECTROSCOPY ACCEPTORS
DOI	10.1007/s00339-014-8576-z
收录类别	SCIE
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000343911600064
出版者	SPRINGER
原始文献类型	Article
EISSN	1432-0630
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.library.ouchn.edu.cn/handle/39V7QQFX/168349
专题	国家开放大学江苏分部
通讯作者	Liu, Jianlin
作者单位	1.Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA; 2.Univ Calif Irvine, Calif Inst Telecommun & Informat Technol Calit2, Lab Xray & Electron Instrumentat LEXI, Irvine, CA 92697 USA; 3.Jiangsu Open Univ, Nantong Coll, Nantong 226006, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Morshed, Muhammad M.,Zuo, Zheng,Huang, Jian,et al. Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,117(3):1467-1472.
APA	Morshed, Muhammad M..,Zuo, Zheng.,Huang, Jian.,Zheng, Jian-Guo.,Lin, Qiyin.,...&Liu, Jianlin.(2014).Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,117(3),1467-1472.
MLA	Morshed, Muhammad M.,et al."Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 117.3(2014):1467-1472.