The high-energy crystal surface of a metal oxide semiconductor (MOS) shows obvious advantages and application potential in the field of gas sensors because of its many surface suspension bonds and higher surface energy. Due to the interplay of thermodynamics and kinetics, the high-energy crystal surface disappears over time because of the rapid growth rate of MOSs. This limitation stems from a lack of deep comprehension of the physical nature behind the evolution of the high-energy crystal surface structure and its growth mechanism. In this comprehensive review, our focal point lies in outlining the methods involved in the preparation of MOS materials and facet-dependent MOS gas sensors. A salient feature of our discussion delves into the design and advancement of in situ liquid cell transmission electron microscopy (TEM), followed by a review on the growth of crystal surfaces. We aim to unravel and shed light on the potential strategies for creating these property-on-demand MOS nanostructures.
Wei, Wei,Gou, Rong. Design Surface/Interface Structure of Metal Oxide Semiconductor Using In Situ Liquid Cell Transmission Electron Microscopy: Implications for Gas-Sensing Applications[J].
CRYSTAL GROWTH & DESIGN,2023,23(11):8453-8467.
APA
Wei, Wei,&Gou, Rong.(2023).Design Surface/Interface Structure of Metal Oxide Semiconductor Using In Situ Liquid Cell Transmission Electron Microscopy: Implications for Gas-Sensing Applications.CRYSTAL GROWTH & DESIGN,23(11),8453-8467.
MLA
Wei, Wei,et al."Design Surface/Interface Structure of Metal Oxide Semiconductor Using In Situ Liquid Cell Transmission Electron Microscopy: Implications for Gas-Sensing Applications".CRYSTAL GROWTH & DESIGN 23.11(2023):8453-8467.
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