Enhanced Electroluminescence Quantum Efficiency via Tunable 2D Built-In Electric Fields | |
Yang, Yutian1; An, Xuhong1,2; Yang, Jiafu1; Fu, Qiang1; Wei, Zhiyong3,4; Ni, Zhenhua1,5; Ma, Liang1; Hu, Zhenliang1; Lu, Junpeng1 | |
2024-08-28 | |
发表期刊 | ADVANCED OPTICAL MATERIALS
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ISSN | 2195-1071 |
摘要 | The built-in electric field (BIEF) is of utmost importance for 2D optoelectronic devices, which are typically realized in heterostructures created through interfacial engineering. However, the limitations of the sharp field distribution, inevitable energy band discontinuity, and inflexible construction of 2D heterostructures restrict their application. In this work, a large-scale, continuous, and controllable BIEF using monolayer WxMo1-xS2 alloys with tunable composition gradients is constructed. Density functional simulations demonstrate that a BIEF can be formed within the whole alloy due to the charge distribution resulting from the composition gradients. Accordingly, a monolayer WxMo1-xS2 alloy with a controllable composition gradient via two-step chemical vapor deposition and confirmed the continuous tunability of the band structure and the variation in the composition gradient within the alloy is synthesized. Using the BIEF, 2D light-emitting diodes (LEDs) based on WxMo1-xS2 alloys and achieve strong electroluminescence emission are constructed. A large BIEF facilitates charge carrier migration and recombination, and the external quantum efficiency (over 0.62%) is more than 5 times that of small BIEF LEDs. The study not only provides a novel approach for the on-demand design of a BIEF but also provides an opportunity for potential applications in optoelectronic devices. A large-scale, continuous, and controllable built-in electric field (BIEF) can be realized in 2D WxMo1-xS2 alloys with continuous and controllable band structures. The strength of the BIEF mainly depends on the magnitude of the composition gradient. The larger BIEF in the large gradient alloy can promote carrier recombination near the junction, resulting in higher photoelectric efficiency. image |
关键词 | 2D materials alloy built-in electric field EQE light-emitting diodes |
其他关键词 | DIODES |
DOI | 10.1002/adom.202401685 |
收录类别 | SCIE |
语种 | 英语 |
WOS研究方向 | Materials Science ; Optics |
WOS类目 | Materials Science, Multidisciplinary ; Optics |
WOS记录号 | WOS:001299557500001 |
出版者 | WILEY-V C H VERLAG GMBH |
原始文献类型 | Article ; Early Access |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.library.ouchn.edu.cn/handle/39V7QQFX/171611 |
专题 | 国家开放大学江苏分部 |
通讯作者 | Ni, Zhenhua; Ma, Liang; Hu, Zhenliang; Lu, Junpeng |
作者单位 | 1.Southeast Univ, Sch Phys, Key Lab Quantum Mat & Devices, Minist Educ, Nanjing 211189, Peoples R China; 2.Jiangsu Open Univ, Sch Educ, Nanjing 211189, Peoples R China; 3.Southeast Univ, Jiangsu Key Lab Design & Manufacture Micro Nano Bi, Nanjing 211189, Peoples R China; 4.Southeast Univ, Sch Mech Engn, Nanjing 211189, Peoples R China; 5.Purple Mt Labs, Nanjing 211111, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, Yutian,An, Xuhong,Yang, Jiafu,et al. Enhanced Electroluminescence Quantum Efficiency via Tunable 2D Built-In Electric Fields[J]. ADVANCED OPTICAL MATERIALS,2024. |
APA | Yang, Yutian.,An, Xuhong.,Yang, Jiafu.,Fu, Qiang.,Wei, Zhiyong.,...&Lu, Junpeng.(2024).Enhanced Electroluminescence Quantum Efficiency via Tunable 2D Built-In Electric Fields.ADVANCED OPTICAL MATERIALS. |
MLA | Yang, Yutian,et al."Enhanced Electroluminescence Quantum Efficiency via Tunable 2D Built-In Electric Fields".ADVANCED OPTICAL MATERIALS (2024). |
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