| Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance | |
| Zheng, Xiaohong1; Yang, Shili1; Zheng, Zhifan1; Liu, Chun-Sheng2; Wang, Weiyang3; Zhang, Lei4,5 | |
| 2024-11-25 | |
| 发表期刊 | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| 卷号 | 125期号:22 |
| 摘要 | Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of FM/barrier/FM/barrier/FM with double barriers, in contrast to the traditional single barrier structure FM/barrier/FM. We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of Fe/MgO/Fe MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier Fe/MgO/Fe MTJ, the TMR ratio is obtained as 122%, while in the double barrier Fe/MgO/Fe/MgO/Fe MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs. |
| DOI | 10.1063/5.0235559 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China10.13039/501100001809 [12074230, 12474047, 11974355]; National Natural Science Foundation of China; Fund for Shanxi 1331 Project; Shanxi Scholarship Council of China |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| WOS记录号 | WOS:001363255300012 |
| 出版者 | AIP Publishing |
| 原始文献类型 | Article |
| EISSN | 1077-3118 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.library.ouchn.edu.cn/handle/39V7QQFX/174311 |
| 专题 | 国家开放大学 |
| 通讯作者 | Zheng, Xiaohong; Wang, Weiyang |
| 作者单位 | 1.Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R China; 2.Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China; 3.Shangrao Open Univ, Shangrao 334001, Jiangxi, Peoples R China; 4.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China; 5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Xiaohong,Yang, Shili,Zheng, Zhifan,et al. Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance[J]. APPLIED PHYSICS LETTERS,2024,125(22). |
| APA | Zheng, Xiaohong,Yang, Shili,Zheng, Zhifan,Liu, Chun-Sheng,Wang, Weiyang,&Zhang, Lei.(2024).Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance.APPLIED PHYSICS LETTERS,125(22). |
| MLA | Zheng, Xiaohong,et al."Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance".APPLIED PHYSICS LETTERS 125.22(2024). |
| 条目包含的文件 | 条目无相关文件。 | |||||
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